SiGe HMOSFET differential pair
نویسندگان
چکیده
A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can be exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were obtained for the performance of a differential pair. At the specified power of 1.25mW the input range of the SiGe differential pair at which the percent nonlinearity is bellow 1%, is roughly twice of its Si counterpart. Additionally the SiGe circuit is more power efficient since an increase of the power consumption from 1mW to 1.25mW accounts for an improvement of about 40% in its input range, as compared to only 10% for Si.
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